Samsung M391B5673EH1-CH9 2GB vs Corsair CMK16GX4M4C3200C16 4GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Corsair CMK16GX4M4C3200C16 4GB

Corsair CMK16GX4M4C3200C16 4GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 36

左右 28% 更低的延时

Corsair CMK16GX4M4C3200C16 4GB

需要考虑的原因
Corsair CMK16GX4M4C3200C16 4GB

报告一个错误

更快的读取速度，GB/s

16 12.8

测试中的平均数值
更快的写入速度，GB/s

12.3 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Corsair CMK16GX4M4C3200C16 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 36
读取速度，GB/s

12.8 16.0
写入速度，GB/s

9.0 12.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3071

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW32GX4M4Z2933C16 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMK16GX4M4C3200C16 4GB

Corsair CMK16GX4M4C3200C16 4GB

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Crucial Technology CT16G4SFD8266.C16FE 16GB

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G Skill Intl F4-4800C19-8GTZRC 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

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G Skill Intl F3-2400C11-8GSR 8GB

Samsung M392A4K40BM0-CRC 32GB

Samsung M392A4K40BM0-CRC 32GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Corsair CMK8GX4M1Z3200C16 8GB

Corsair CMK8GX4M1Z3200C16 8GB