Samsung M391B5673EH1-CH9 2GB vs Corsair CMK32GX4M4Z3200C16 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Corsair CMK32GX4M4Z3200C16 8GB

Corsair CMK32GX4M4Z3200C16 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 34

左右 24% 更低的延时

Corsair CMK32GX4M4Z3200C16 8GB

需要考虑的原因
Corsair CMK32GX4M4Z3200C16 8GB

报告一个错误

更快的读取速度，GB/s

16.6 12.8

测试中的平均数值
更快的写入速度，GB/s

14.4 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Corsair CMK32GX4M4Z3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 34
读取速度，GB/s

12.8 16.6
写入速度，GB/s

9.0 14.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2143 3415

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

G Skill Intl F4-4000C16-8GVK 8GB

G Skill Intl F4-4000C16-8GVK 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

G Skill Intl F4-2400C17-8GIS 8GB

G Skill Intl F4-2400C17-8GIS 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Golden Empire CL17-17-17 D4-2400 16GB

Golden Empire CL17-17-17 D4-2400 16GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

G Skill Intl F4-4133C19-4GTZ 4GB

G Skill Intl F4-4133C19-4GTZ 4GB

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

G Skill Intl F4-3000C15-8GVKB 8GB

G Skill Intl F4-3000C15-8GVKB 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-3000C16-8GTRS 8GB

G Skill Intl F4-3000C16-8GTRS 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Avant Technology W6451U66J7240ND 4GB

Avant Technology W6451U66J7240ND 4GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F4-3600C16-8GTRS 8GB

G Skill Intl F4-3600C16-8GTRS 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Samsung M386A4K40BB0-CRC 32GB

Samsung M386A4K40BB0-CRC 32GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

Micron Technology 16ATF2G64HZ-2G6H1 16GB

Micron Technology 16ATF2G64HZ-2G6H1 16GB

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB