Samsung M391B5673EH1-CH9 2GB vs Corsair CMK64GX4M4X4000C18 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Corsair CMK64GX4M4X4000C18 16GB

Corsair CMK64GX4M4X4000C18 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 38

左右 32% 更低的延时

Corsair CMK64GX4M4X4000C18 16GB

需要考虑的原因
Corsair CMK64GX4M4X4000C18 16GB

报告一个错误

更快的读取速度，GB/s

13.6 12.8

测试中的平均数值
更快的写入速度，GB/s

13.9 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Corsair CMK64GX4M4X4000C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 38
读取速度，GB/s

12.8 13.6
写入速度，GB/s

9.0 13.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3320

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B2G70BH0-CK0 16GB

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Corsair CM4S16GL3200K18K2 16GB

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G Skill Intl F4-4000C18-8GTZRB 8GB

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Good Wealth Technology Ltd. 8GB

Good Wealth Technology Ltd. 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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Kingston 9905630-052.A00G 16GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Crucial Technology CT4G4DFS8266.C8FF 4GB

Crucial Technology CT4G4DFS8266.C8FF 4GB