Samsung M391B5673EH1-CH9 2GB vs Corsair CMK8GX4M1A2666C16 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Corsair CMK8GX4M1A2666C16 8GB

Corsair CMK8GX4M1A2666C16 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 30

左右 13% 更低的延时

Corsair CMK8GX4M1A2666C16 8GB

需要考虑的原因
Corsair CMK8GX4M1A2666C16 8GB

报告一个错误

更快的读取速度，GB/s

16.2 12.8

测试中的平均数值
更快的写入速度，GB/s

11.5 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Corsair CMK8GX4M1A2666C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 30
读取速度，GB/s

12.8 16.2
写入速度，GB/s

9.0 11.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 2966

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M391B5673EH1-CH9 2GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Kingston 9965525-018.A00LF 4GB

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Kingston 9965433-034.A00LF 4GB

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Micron Technology 8ATF1G64HZ-2G3H1 8GB

Kingston 99U5471-056.A00LF 8GB

Kingston 99U5471-056.A00LF 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Corsair CMW16GX4M2D3600C18 8GB

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Samsung M378T5663QZ3-CF7 2GB

Kingston KTP9W1-MID 16GB

Kingston KTP9W1-MID 16GB