Samsung M391B5673EH1-CH9 2GB vs Corsair CMW128GX4M4D3000C16 32GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Corsair CMW128GX4M4D3000C16 32GB

Corsair CMW128GX4M4D3000C16 32GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 32

左右 19% 更低的延时

Corsair CMW128GX4M4D3000C16 32GB

需要考虑的原因
Corsair CMW128GX4M4D3000C16 32GB

报告一个错误

更快的读取速度，GB/s

18.8 12.8

测试中的平均数值
更快的写入速度，GB/s

14.6 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Corsair CMW128GX4M4D3000C16 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 32
读取速度，GB/s

12.8 18.8
写入速度，GB/s

9.0 14.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3765

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5474-037.A00LF 4GB

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Corsair CMR64GX4M8C3000C15 8GB

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Essencore Limited KD4AGU880-32A160U 16GB

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AMD AE34G1601U1 4GB

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Kingston 99U5595-005.A00LF 2GB

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G Skill Intl F4-3000C16-8GVSB 8GB

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A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F4-3200C14-32GTRS 32GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 8ATF1G64AZ-2G6H1 8GB

Micron Technology 8ATF1G64AZ-2G6H1 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Corsair CMK8GX4M2B4200C19 4GB

Corsair CMK8GX4M2B4200C19 4GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Crucial Technology CT8G4SFD8213.M16FB 8GB

Crucial Technology CT8G4SFD8213.M16FB 8GB