Samsung M391B5673EH1-CH9 2GB vs Crucial Technology BLT8G4D30BET4K.C8FD 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 32

左右 19% 更低的延时

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

需要考虑的原因
Crucial Technology BLT8G4D30BET4K.C8FD 8GB

报告一个错误

更快的读取速度，GB/s

16.5 12.8

测试中的平均数值
更快的写入速度，GB/s

13.4 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 32
读取速度，GB/s

12.8 16.5
写入速度，GB/s

9.0 13.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 3274

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Corsair CMK4GX4M1A2400C14 4GB

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Avant Technology F6451U64F9333G 4GB

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Kingston KVR16N11/8-SP 8GB

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Crucial Technology BLS8G4D26BFSC.16FD2 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Apacer Technology 78.C1GMW.AZC0B 8GB

Apacer Technology 78.C1GMW.AZC0B 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB

Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Kingston KHX3466C19D4/16G 16GB

Kingston KHX3466C19D4/16G 16GB