Samsung M391B5673EH1-CH9 2GB vs Crucial Technology CT16G4SFD824A.C16FN 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Crucial Technology CT16G4SFD824A.C16FN 16GB

Crucial Technology CT16G4SFD824A.C16FN 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 37

左右 30% 更低的延时

Crucial Technology CT16G4SFD824A.C16FN 16GB

需要考虑的原因
Crucial Technology CT16G4SFD824A.C16FN 16GB

报告一个错误

更快的读取速度，GB/s

15.2 12.8

测试中的平均数值
更快的写入速度，GB/s

11.5 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Crucial Technology CT16G4SFD824A.C16FN 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 37
读取速度，GB/s

12.8 15.2
写入速度，GB/s

9.0 11.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 2802

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Unifosa Corporation HU564404EP0200 4GB

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Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

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Kingston XRMWRN-MIE2 16GB