Samsung M391B5673EH1-CH9 2GB vs Crucial Technology CT16G4SFRA32A.C8FE 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Crucial Technology CT16G4SFRA32A.C8FE 16GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 39

左右 33% 更低的延时

Crucial Technology CT16G4SFRA32A.C8FE 16GB

需要考虑的原因
Crucial Technology CT16G4SFRA32A.C8FE 16GB

报告一个错误

更快的读取速度，GB/s

15.7 12.8

测试中的平均数值
更快的写入速度，GB/s

12.0 9.0

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 39
读取速度，GB/s

12.8 15.7
写入速度，GB/s

9.0 12.0
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2143 2958

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M391B5673EH1-CH9 2GB

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Crucial Technology CT16G4SFRA32A.C8FE 16GB

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Samsung M393B1G70BH0-YK0 8GB

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G Skill Intl F4-2400C15-16GVR 16GB

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takeMS International AG TMS2GB264D083805EV 2GB

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Kingston X74R9W-MIE 8GB

Kingston X74R9W-MIE 8GB

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Samsung M378B5773DH0-CH9 2GB

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Crucial Technology BLE8G4D30AEEA.K16FE 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Gloway International (HK) STK4U2133D15081C 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9905630-030.A00G 16GB

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Patriot Memory (PDP Systems) PSD38G16002S 8GB