Samsung M391B5673EH1-CH9 2GB vs Crucial Technology CT8G4DFD8213.C16FADP 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Crucial Technology CT8G4DFD8213.C16FADP 8GB

Crucial Technology CT8G4DFD8213.C16FADP 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 73

左右 64% 更低的延时
更快的写入速度，GB/s

9.0 7.8

测试中的平均数值

Crucial Technology CT8G4DFD8213.C16FADP 8GB

需要考虑的原因
Crucial Technology CT8G4DFD8213.C16FADP 8GB

报告一个错误

更快的读取速度，GB/s

14.5 12.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Crucial Technology CT8G4DFD8213.C16FADP 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 73
读取速度，GB/s

12.8 14.5
写入速度，GB/s

9.0 7.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 1736

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Crucial Technology BLS4G4D26BFSE.8FE 4GB

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Corsair CML8GX3M2A1600C9 4GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

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G Skill Intl F4-2400C15-8GRR 8GB

G Skill Intl F4-2400C15-8GRR 8GB

Corsair CMX4GX3M1A1333C9 4GB

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G Skill Intl F4-4000C18-8GTZSW 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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V-Color Technology Inc. TN48G26S819-SB 8GB

V-Color Technology Inc. TN48G26S819-SB 8GB

Samsung M3 93T5750CZA-CE6 2GB

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Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB