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Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
比较
Samsung M391B5673EH1-CH9 2GB vs Crucial Technology CT8G4SFS8213.M8FB 8GB
总分
Samsung M391B5673EH1-CH9 2GB
总分
Crucial Technology CT8G4SFS8213.M8FB 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
34
左右 24% 更低的延时
需要考虑的原因
Crucial Technology CT8G4SFS8213.M8FB 8GB
报告一个错误
更快的读取速度,GB/s
14
12.8
测试中的平均数值
更快的写入速度,GB/s
10.4
9.0
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
34
读取速度,GB/s
12.8
14.0
写入速度,GB/s
9.0
10.4
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2143
2616
Samsung M391B5673EH1-CH9 2GB RAM的比较
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Crucial Technology CT8G4SFS8213.M8FB 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Apacer Technology 78.01G86.9H50C 1GB
MemxPro Inc. D4S8GHIOFFC 8GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-3000C15-8GRK 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Patriot Memory (PDP Systems) 4000 C20 Series 8GB
Kingston 99U5584-004.A00LF 4GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Kingston 9905630-051.A00G 16GB
Kingston 99U5428-063.A00LF 8GB
Micron Technology ILG8GS2400A 8GB
Corsair CMX4GX3M1A1333C9 4GB
G Skill Intl F4-3200C16-8GRKB 8GB
Samsung M393B2G70BH0-YK0 16GB
Kingston ACR21D4S15HAG/8G 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-4133C19-8GTZRF 8GB
AMD R5316G1609U2K 8GB
Kingston LV32D4U2S8ME-16X 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Mushkin MR[A/B]4U320LLLM8G 8GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C16-16GTZRX 16GB
报告一个错误
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Bug description
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