RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4SFS824A.M8FB 8GB

Samsung M391B5673EH1-CH9 2GB vs Crucial Technology CT8G4SFS824A.M8FB 8GB

总分
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分
star star star star star
Crucial Technology CT8G4SFS824A.M8FB 8GB

Crucial Technology CT8G4SFS824A.M8FB 8GB

差异 规格 评论

差异

Samsung M391B5673EH1-CH9 2GB 需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 34
    左右 24% 更低的延时
Crucial Technology CT8G4SFS824A.M8FB 8GB 需要考虑的原因
Crucial Technology CT8G4SFS824A.M8FB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.3 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.1 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4SFS824A.M8FB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 34
  • 读取速度，GB/s
    12.8 left arrow 15.3
  • 写入速度，GB/s
    9.0 left arrow 11.1
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2143 left arrow 2659

Samsung M391B5673EH1-CH9 2GB RAM的比较

Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Crucial Technology CT8G4SFS824A.M8FB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4SFS824A.M8FB 8GB
Crucial Technology CT8G4SFS824A.M8FB 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMK16GX4M2Z3200C16 8GB
Corsair CMK16GX4M2Z3200C16 8GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Transcend Information TS512MLH64V1H 4GB
Transcend Information TS512MLH64V1H 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
V-Color Technology Inc. TN48G24S817-VHA/R 8GB
V-Color Technology Inc. TN48G24S817-VHA/R 8GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
G Skill Intl F4-4000C19-8GTZ 8GB
G Skill Intl F4-4000C19-8GTZ 8GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
SK Hynix HMA42GR7AFR4N-TF 16GB
SK Hynix HMA42GR7AFR4N-TF 16GB
内存RAM
SK Hynix HYMP512U64CP8-Y5 1GB
SK Hynix HYMP512U64CP8-Y5 1GB
V-GEN D4R8GL24A8R 8GB
V-GEN D4R8GL24A8R 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-2666C15-8GVR 8GB
G Skill Intl F4-2666C15-8GVR 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Samsung V-GeN D4S4GL30A16TS5 4GB
Samsung V-GeN D4S4GL30A16TS5 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Kingston 9905665-017.A00G 4GB
Kingston 9905665-017.A00G 4GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
Corsair CMSX64GX4M2A3200C22 32GB
Corsair CMSX64GX4M2A3200C22 32GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Corsair CMW16GX4M2Z4600C18 8GB
Corsair CMW16GX4M2Z4600C18 8GB
内存RAM
Kingston KHX1866C10D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
Kingston 9905663-007.A00G 16GB
Kingston 9905663-007.A00G 16GB
内存RAM