RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Essencore Limited KD4AGU880-36A180X 16GB
比较
Samsung M391B5673EH1-CH9 2GB vs Essencore Limited KD4AGU880-36A180X 16GB
总分
Samsung M391B5673EH1-CH9 2GB
总分
Essencore Limited KD4AGU880-36A180X 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
需要考虑的原因
Essencore Limited KD4AGU880-36A180X 16GB
报告一个错误
更快的读取速度,GB/s
18.2
12.8
测试中的平均数值
更快的写入速度,GB/s
18.3
9.0
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Essencore Limited KD4AGU880-36A180X 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
26
读取速度,GB/s
12.8
18.2
写入速度,GB/s
9.0
18.3
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2143
3996
Samsung M391B5673EH1-CH9 2GB RAM的比较
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Essencore Limited KD4AGU880-36A180X 16GB RAM的比较
Smart Modular SG564568FG8N6KF-Z2 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
PNY Electronics PNY 2GB
Crucial Technology BLT4G4D30AETA.K8FD 4GB
Kingston 9905403-515.A00LF 8GB
JUHOR JHD2666U1916JG 16GB
G Skill Intl F5-6400J3239G16G 16GB
Kingmax Semiconductor GLLG42F-DA---------- 8GB
Kingston 9965525-140.A00LF 8GB
Micron Technology AFLD416EH1P 16GB
Protocol Engines Kingrock 800 2GB 2GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
AMD AE34G1601U1 4GB
Crucial Technology CT8G4DFS8266.M8FJ 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Corsair CMSX64GX4M2A2933C19 32GB
Kingston 99U5474-028.A00LF 4GB
G Skill Intl F4-3200C14-32GVK 32GB
Kingston KVR533D2N4 512MB
G Skill Intl F4-3200C22-16GRS 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Apacer Technology 78.C2GF2.AU00B 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Avant Technology W642GU42J5213N8 16GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-2666C15-8GRKB 8GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
报告一个错误
×
Bug description
Source link