Samsung M391B5673EH1-CH9 2GB vs G Skill Intl F4-3600C14-8GTZNB 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

G Skill Intl F4-3600C14-8GTZNB 8GB

G Skill Intl F4-3600C14-8GTZNB 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

G Skill Intl F4-3600C14-8GTZNB 8GB

需要考虑的原因
G Skill Intl F4-3600C14-8GTZNB 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 26

左右 -18% 更低的延时
更快的读取速度，GB/s

19.6 12.8

测试中的平均数值
更快的写入速度，GB/s

17.3 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-3600C14-8GTZNB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 22
读取速度，GB/s

12.8 19.6
写入速度，GB/s

9.0 17.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3879

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

Samsung M393A2K43BB1-CRC 16GB

Samsung M393A2K43BB1-CRC 16GB

Kingston 99U5403-468.A00LF 8GB

Kingston 99U5403-468.A00LF 8GB

G Skill Intl F4-4000C18-8GTZKK 8GB

G Skill Intl F4-4000C18-8GTZKK 8GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Samsung T471A1K43CB1-CRC 8GB

Samsung T471A1K43CB1-CRC 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-3600C14-8GTZNB 8GB

G Skill Intl F4-3600C14-8GTZNB 8GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

SK Hynix HMA851S6CJR6N-UH 4GB

SK Hynix HMA851S6CJR6N-UH 4GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

G Skill Intl F4-2133C15-8GRB 8GB

G Skill Intl F4-2133C15-8GRB 8GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

Corsair CMR32GX4M2A2666C16 16GB

Corsair CMR32GX4M2A2666C16 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CM4X4GF2400C16K4 4GB

Corsair CM4X4GF2400C16K4 4GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

G Skill Intl F4-2666C19-8GRS 8GB

G Skill Intl F4-2666C19-8GRS 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Corsair CMR16GX4M2C3466C16 8GB

Corsair CMR16GX4M2C3466C16 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3600C16-8GTZRC 8GB

G Skill Intl F4-3600C16-8GTZRC 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston KCRXJ6-HYJ 16GB

Kingston KCRXJ6-HYJ 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

G Skill Intl F4-3200C16-8GTZSK 8GB

G Skill Intl F4-3200C16-8GTZSK 8GB