Samsung M391B5673EH1-CH9 2GB vs G Skill Intl F4-4400C19-8GTZSW 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

G Skill Intl F4-4400C19-8GTZSW 8GB

G Skill Intl F4-4400C19-8GTZSW 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

G Skill Intl F4-4400C19-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-4400C19-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

16 26

左右 -63% 更低的延时
更快的读取速度，GB/s

22.1 12.8

测试中的平均数值
更快的写入速度，GB/s

18.6 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-4400C19-8GTZSW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 16
读取速度，GB/s

12.8 22.1
写入速度，GB/s

9.0 18.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3906

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-4400C19-8GTZSW 8GB

G Skill Intl F4-4400C19-8GTZSW 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Kingston KF3200C16D4/32GX 32GB

Kingston KF3200C16D4/32GX 32GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-3000C14-8GTZR 8GB

G Skill Intl F4-3000C14-8GTZR 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Kingston HP37D4U1S8ME-16X 16GB

Kingston HP37D4U1S8ME-16X 16GB

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

Samsung M393A4K40BB1-CRC 32GB

Samsung M393A4K40BB1-CRC 32GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Patriot Memory (PDP Systems) PSD44G240081S 4GB

Patriot Memory (PDP Systems) PSD44G240081S 4GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Corsair CMK32GX4M1A2666C16 32GB

Corsair CMK32GX4M1A2666C16 32GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Crucial Technology CT16G4DFD8213.C16FDD 16GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KF3600C18D4/16GX 16GB

Kingston KF3600C18D4/16GX 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMD64GX4M4A2400C14 16GB

Corsair CMD64GX4M4A2400C14 16GB