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Samsung M391B5673EH1-CH9 2GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

Samsung M391B5673EH1-CH9 2GB vs GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

总分
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分
star star star star star
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

差异 规格 评论

差异

Samsung M391B5673EH1-CH9 2GB 需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 36
    左右 28% 更低的延时
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB 需要考虑的原因
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.4 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 36
  • 读取速度，GB/s
    12.8 left arrow 17.4
  • 写入速度，GB/s
    9.0 left arrow 12.8
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2143 left arrow 3074

Samsung M391B5673EH1-CH9 2GB RAM的比较

Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
SK Hynix HMA851S6JJR6N-VK 4GB
SK Hynix HMA851S6JJR6N-VK 4GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Avant Technology W641GU67J5213N8 8GB
Avant Technology W641GU67J5213N8 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4DFS8213.C8FDD1 8GB
Crucial Technology CT8G4DFS8213.C8FDD1 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Avant Technology W642GU42J2320NH 16GB
Avant Technology W642GU42J2320NH 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
内存RAM
Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
Mushkin MRX4U300GJJM16G 16GB
Mushkin MRX4U300GJJM16G 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Avant Technology W642GU42J5213N8 16GB
Avant Technology W642GU42J5213N8 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Patriot Memory (PDP Systems) PSD48G240082 8GB
Patriot Memory (PDP Systems) PSD48G240082 8GB
内存RAM