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Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT4G4DFS824A.C8FE 4GB

Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology CT4G4DFS824A.C8FE 4GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Crucial Technology CT4G4DFS824A.C8FE 4GB

Crucial Technology CT4G4DFS824A.C8FE 4GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.6
    测试中的平均数值
Crucial Technology CT4G4DFS824A.C8FE 4GB 需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    72 left arrow 77
    左右 -7% 更低的延时
  • 更快的写入速度，GB/s
    8.1 left arrow 2,622.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 72
  • 读取速度，GB/s
    3,405.2 left arrow 15.6
  • 写入速度，GB/s
    2,622.0 left arrow 8.1
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    763 left arrow 1728

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Crucial Technology CT4G4DFS824A.C8FE 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD48G213382 8GB
Patriot Memory (PDP Systems) PSD48G213382 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3333C16-16GTZB 16GB
G Skill Intl F4-3333C16-16GTZB 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Golden Empire CL16-16-16 D4-2400 8GB
Golden Empire CL16-16-16 D4-2400 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Shenzen Recadata Storage Technology 8GB
Shenzen Recadata Storage Technology 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Kingston KHX3200C16D4/32GX 32GB
Kingston KHX3200C16D4/32GX 32GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Golden Empire CL14-16-16 D4-2400 16GB
Golden Empire CL14-16-16 D4-2400 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK32GX4M4K4333C19 8GB
Corsair CMK32GX4M4K4333C19 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Corsair CMH32GX4M2E3200C16 16GB
Corsair CMH32GX4M2E3200C16 16GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Crucial Technology BL8G32C16U4RL.M8FE1 8GB
Crucial Technology BL8G32C16U4RL.M8FE1 8GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Apacer Technology 78.D1GS7.B7B0B 16GB
Apacer Technology 78.D1GS7.B7B0B 16GB
内存RAM