Samsung M391B5673EH1-CH9 2GB vs InnoDisk Corporation M4S0-8GSSOCRG 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

InnoDisk Corporation M4S0-8GSSOCRG 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

更快的写入速度，GB/s

9.0 7.8

测试中的平均数值

InnoDisk Corporation M4S0-8GSSOCRG 8GB

需要考虑的原因
InnoDisk Corporation M4S0-8GSSOCRG 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 26

左右 -18% 更低的延时
更快的读取速度，GB/s

15.7 12.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 22
读取速度，GB/s

12.8 15.7
写入速度，GB/s

9.0 7.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 2493

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240