Samsung M391B5673EH1-CH9 2GB vs InnoDisk Corporation M4S0-AGS1O5IK 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

InnoDisk Corporation M4S0-AGS1O5IK 16GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 42

左右 38% 更低的延时

InnoDisk Corporation M4S0-AGS1O5IK 16GB

需要考虑的原因
InnoDisk Corporation M4S0-AGS1O5IK 16GB

报告一个错误

更快的读取速度，GB/s

13.1 12.8

测试中的平均数值
更快的写入速度，GB/s

11.5 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 42
读取速度，GB/s

12.8 13.1
写入速度，GB/s

9.0 11.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2143 2525

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

SK Hynix HMA82GU6DJR8N-VK 16GB

SK Hynix HMA82GU6DJR8N-VK 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston XK2M26-MIE-NX 16GB

Kingston XK2M26-MIE-NX 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Kingston KHX2400C15S4/8G 8GB

Kingston KHX2400C15S4/8G 8GB

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-2400C17-16GSXF 16GB

G Skill Intl F4-2400C17-16GSXF 16GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Corsair CMD16GX4M4B3200C14 4GB

Corsair CMD16GX4M4B3200C14 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Corsair CMD16GX4M2E4000C19 8GB

Corsair CMD16GX4M2E4000C19 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Avant Technology W641GU42J7240NB 8GB

Avant Technology W641GU42J7240NB 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology BL8G32C16U4W.8FE 8GB

Crucial Technology BL8G32C16U4W.8FE 8GB