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Samsung M391B5673EH1-CH9 2GB
Kingston 9905744-077.A00G 16GB
比较
Samsung M391B5673EH1-CH9 2GB vs Kingston 9905744-077.A00G 16GB
总分
Samsung M391B5673EH1-CH9 2GB
总分
Kingston 9905744-077.A00G 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
41
左右 37% 更低的延时
需要考虑的原因
Kingston 9905744-077.A00G 16GB
报告一个错误
更快的读取速度,GB/s
15.6
12.8
测试中的平均数值
更快的写入速度,GB/s
11.2
9.0
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Kingston 9905744-077.A00G 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
41
读取速度,GB/s
12.8
15.6
写入速度,GB/s
9.0
11.2
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2143
2685
Samsung M391B5673EH1-CH9 2GB RAM的比较
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Kingston 9905744-077.A00G 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Samsung M391B5673EH1-CH9 2GB
Kingston 9905744-077.A00G 16GB
A-DATA Technology DQKD1A08 1GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston 9905743-045.A00G 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) PSD44G213381 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston 16ATF2G64AZ-2G1B1 8GB
Kingston KF552C40-16 16GB
G Skill Intl F4-4266C17-8GTZR 8GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-3733C17-8GTZKK 8GB
Kingston 99U5474-010.A00LF 2GB
Kingston XWM8G1-MIE 32GB
Kllisre KRE-D3U1600M/8G 8GB
Kingston ACR32D4S2S1ME-8 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
Samsung M3 78T2863EHS-CF7 1GB
Chun Well Technology Holding Limited MD4U1636181DCW 16G
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
报告一个错误
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Bug description
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