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Samsung M391B5673EH1-CH9 2GB
Kingston KF3200C16D4/16GX 16GB

Samsung M391B5673EH1-CH9 2GB vs Kingston KF3200C16D4/16GX 16GB

总分
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分
star star star star star
Kingston KF3200C16D4/16GX 16GB

Kingston KF3200C16D4/16GX 16GB

差异 规格 评论

差异

Samsung M391B5673EH1-CH9 2GB 需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 31
    左右 16% 更低的延时
Kingston KF3200C16D4/16GX 16GB 需要考虑的原因
Kingston KF3200C16D4/16GX 16GB
报告一个错误
  • 更快的读取速度，GB/s
    19.5 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Kingston KF3200C16D4/16GX 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 31
  • 读取速度，GB/s
    12.8 left arrow 19.5
  • 写入速度，GB/s
    9.0 left arrow 14.3
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2143 left arrow 3518

Samsung M391B5673EH1-CH9 2GB RAM的比较

Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Kingston KF3200C16D4/16GX 16GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Golden Empire CL15-17-17 D4-3200 8GB
Golden Empire CL15-17-17 D4-3200 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston KF3200C16D4/16GX 16GB
Kingston KF3200C16D4/16GX 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston K821PJ-MID 16GB
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内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
EVGA 8GX-D4-3000-MR 8GB
EVGA 8GX-D4-3000-MR 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
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G Skill Intl F4-2666C19-16GIS 16GB
内存RAM
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Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-4266C19-8GTRS 8GB
G Skill Intl F4-4266C19-8GTRS 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston 9905702-007.A00G 8GB
Kingston 9905702-007.A00G 8GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT8G4SFD8213.C16FHP 8GB
Crucial Technology CT8G4SFD8213.C16FHP 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3200C16-4GVKB 4GB
G Skill Intl F4-3200C16-4GVKB 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Transcend Information JM2666HLG-16GK 8GB
Transcend Information JM2666HLG-16GK 8GB
内存RAM
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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Corsair CMH32GX4M2Z3200C16 16GB
Corsair CMH32GX4M2Z3200C16 16GB
内存RAM