Samsung M391B5673EH1-CH9 2GB vs Kingston KHX2400C15/8G 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Kingston KHX2400C15/8G 8GB

Kingston KHX2400C15/8G 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 31

左右 16% 更低的延时

Kingston KHX2400C15/8G 8GB

需要考虑的原因
Kingston KHX2400C15/8G 8GB

报告一个错误

更快的读取速度，GB/s

16.5 12.8

测试中的平均数值
更快的写入速度，GB/s

11.9 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Kingston KHX2400C15/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 31
读取速度，GB/s

12.8 16.5
写入速度，GB/s

9.0 11.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 3033

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-2800C15-4GVRB 4GB

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Ramaxel Technology RMT3160ED58E9W1600 4GB

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Kingston 99U5403-124.A00LF 8GB

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Crucial Technology BLS16G4D32AESE.M16FE 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston 9905624-036.A00G 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

SK Hynix HMA451R7MFR8N-TFTD 4GB

SK Hynix HMA451R7MFR8N-TFTD 4GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

SK Hynix GKE160SO102408-2400 16GB

SK Hynix GKE160SO102408-2400 16GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Corsair CMW128GX4M8C3000C16 16GB

Corsair CMW128GX4M8C3000C16 16GB