TwinMOS 8DHE3MN8-HATP 2GB vs SK Hynix HMA451R7MFR8N-TFTD 4GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

SK Hynix HMA451R7MFR8N-TFTD 4GB

SK Hynix HMA451R7MFR8N-TFTD 4GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的写入速度，GB/s

870.4 7.3

测试中的平均数值

SK Hynix HMA451R7MFR8N-TFTD 4GB

需要考虑的原因
SK Hynix HMA451R7MFR8N-TFTD 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 87

左右 -118% 更低的延时
更快的读取速度，GB/s

9.3 3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

SK Hynix HMA451R7MFR8N-TFTD 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 40
读取速度，GB/s

3,155.6 9.3
写入速度，GB/s

870.4 7.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 1773

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3333C16-4GRKD 4GB

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Kingston 99U5471-012.A00LF 4GB

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Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

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Kingston 99U5474-038.A00LF 4GB

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Crucial Technology CT16G4DFD824A.C16FHD 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

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Apacer Technology 78.CAGR4.40C0B 8GB

Apacer Technology 78.CAGR4.40C0B 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

Samsung M471B5273EB0-CK0 4GB

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Micron Technology 8ATF1G64HZ-3G2E1 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Ramaxel Technology RMSA3270MB86H9F2400 4GB

Ramaxel Technology RMSA3270MB86H9F2400 4GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-3200C14-16GTZN 16GB

G Skill Intl F4-3200C14-16GTZN 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

A-DATA Technology AO1P24HC4R1-BUYS 4GB

A-DATA Technology AO1P24HC4R1-BUYS 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Nanya Technology NT2GC64B88G0NS-CG 2GB

Nanya Technology NT2GC64B88G0NS-CG 2GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

G Skill Intl F4-3000C14-8GVK 8GB

G Skill Intl F4-3000C14-8GVK 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT16G4DFD8213.C16FBR 16GB

Crucial Technology CT16G4DFD8213.C16FBR 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

G Skill Intl F4-2800C15-4GTZB 4GB

G Skill Intl F4-2800C15-4GTZB 4GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

Crucial Technology CT8G4DFRA266.M4FE 8GB

Crucial Technology CT8G4DFRA266.M4FE 8GB