Samsung M391B5673EH1-CH9 2GB vs Kingston MSI32D4S2S1ME-8 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Kingston MSI32D4S2S1ME-8 8GB

Kingston MSI32D4S2S1ME-8 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 32

左右 19% 更低的延时

Kingston MSI32D4S2S1ME-8 8GB

需要考虑的原因
Kingston MSI32D4S2S1ME-8 8GB

报告一个错误

更快的读取速度，GB/s

15.9 12.8

测试中的平均数值
更快的写入速度，GB/s

10.5 9.0

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Kingston MSI32D4S2S1ME-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 32
读取速度，GB/s

12.8 15.9
写入速度，GB/s

9.0 10.5
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2143 2733

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX1866C10D3/4G 4GB

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Corsair CMV4GX4M1A2666C18 4GB

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Samsung M391B5673EH1-CH9 2GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Corsair VS2GB1333D4 2GB

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Corsair CM4B8G4J2400A16K2-ON 8GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Patriot Memory (PDP Systems) PSD416G24002S 16GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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V-Color Technology Inc. TN416G26D819-SB 16GB

V-Color Technology Inc. TN416G26D819-SB 16GB

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB