Samsung M391B5673EH1-CH9 2GB vs Mushkin MR[A/B]4U346GJJM8G 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Mushkin MR[A/B]4U346GJJM8G 8GB

Mushkin MR[A/B]4U346GJJM8G 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 57

左右 54% 更低的延时

Mushkin MR[A/B]4U346GJJM8G 8GB

需要考虑的原因
Mushkin MR[A/B]4U346GJJM8G 8GB

报告一个错误

更快的读取速度，GB/s

19.4 12.8

测试中的平均数值
更快的写入速度，GB/s

9.7 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Mushkin MR[A/B]4U346GJJM8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 57
读取速度，GB/s

12.8 19.4
写入速度，GB/s

9.0 9.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 2253

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Kingston 9965525-018.A00LF 4GB

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Corsair CMV4GX4M1A2133C15 4GB

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Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

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Corsair CM3X8GA2400C11Y2R 8GB

Crucial Technology BL16G36C16U4BL.M16FE 16GB

Crucial Technology BL16G36C16U4BL.M16FE 16GB

Kingston 9905403-156.A00LF 2GB

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Apacer Technology 78.A1GC6.9H10C 2GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMSO8GX4M1A2133C15 8GB

Corsair CMSO8GX4M1A2133C15 8GB