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Samsung M391B5673EH1-CH9 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
比较
Samsung M391B5673EH1-CH9 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
总分
Samsung M391B5673EH1-CH9 2GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
56
左右 54% 更低的延时
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
报告一个错误
更快的读取速度,GB/s
20.1
12.8
测试中的平均数值
更快的写入速度,GB/s
10.5
9.0
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
56
读取速度,GB/s
12.8
20.1
写入速度,GB/s
9.0
10.5
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2143
2455
Samsung M391B5673EH1-CH9 2GB RAM的比较
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M391B5673EH1-CH9 2GB
Kingston 9932291-002.A00G 4GB
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3000C14-16GVK 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9965589-017.D00G 8GB
Kingston KF3000C15D4/8GX 8GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
Samsung M393B5270CH0-CH9 4GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
SK Hynix HMA851U6CJR6N-UH 4GB
Kingston 9905402-665.A00LF 4GB
Kingston HP32D4U2S8ME-16 16GB
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX3200C20S4/8G 8GB
Crucial Technology CT51264BA1339.D16F 4GB
Corsair CM4X16GE2133C13K8 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-2400C17-8GNT 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston ACR32D4S2S8ME-16 16GB
Kingston KVR533D2N4 512MB
Samsung V-GeN D4S4GL32A8TL 4GB
Crucial Technology CT51264BA1339.D16F 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
报告一个错误
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Bug description
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