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Samsung M391B5673EH1-CH9 2GB
SK Hynix HMA42GR7AFR4N-TF 16GB

Samsung M391B5673EH1-CH9 2GB vs SK Hynix HMA42GR7AFR4N-TF 16GB

总分
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分
star star star star star
SK Hynix HMA42GR7AFR4N-TF 16GB

SK Hynix HMA42GR7AFR4N-TF 16GB

差异 规格 评论

差异

Samsung M391B5673EH1-CH9 2GB 需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 50
    左右 48% 更低的延时
  • 更快的读取速度，GB/s
    12.8 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 8.2
    测试中的平均数值
SK Hynix HMA42GR7AFR4N-TF 16GB 需要考虑的原因
SK Hynix HMA42GR7AFR4N-TF 16GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
SK Hynix HMA42GR7AFR4N-TF 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 50
  • 读取速度，GB/s
    12.8 left arrow 10.6
  • 写入速度，GB/s
    9.0 left arrow 8.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2143 left arrow 2386

Samsung M391B5673EH1-CH9 2GB RAM的比较

Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

SK Hynix HMA42GR7AFR4N-TF 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M393A1G40DB0-CPB 8GB
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G Skill Intl F3-1866C8-8GTX 8GB
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内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
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Samsung M471A1A43DB0-CPB 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
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Samsung M391B5673FH0-CH9 2GB
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G Skill Intl F4-3200C14-16GTZSK 16GB
内存RAM
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G Skill Intl F4-4000C18-8GTZSW 8GB
G Skill Intl F4-4000C18-8GTZSW 8GB
内存RAM
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G Skill Intl F4-3733C17-16GTZSW 16GB
G Skill Intl F4-3733C17-16GTZSW 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
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Ramaxel Technology RMUA5120MB86H9F2400 4GB
内存RAM
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Kingston 9905678-005.A00G 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
内存RAM