Samsung M391B5673EH1-CH9 2GB vs Smart Modular SMU4WEC8C1K0464FCG 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Smart Modular SMU4WEC8C1K0464FCG 8GB

Smart Modular SMU4WEC8C1K0464FCG 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 4% 更低的延时

Smart Modular SMU4WEC8C1K0464FCG 8GB

需要考虑的原因
Smart Modular SMU4WEC8C1K0464FCG 8GB

报告一个错误

更快的读取速度，GB/s

17 12.8

测试中的平均数值
更快的写入速度，GB/s

13.3 9.0

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Smart Modular SMU4WEC8C1K0464FCG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 27
读取速度，GB/s

12.8 17.0
写入速度，GB/s

9.0 13.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2143 3296

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CB16GS2666.C8ET 16GB

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Kingston 9965525-155.A00LF 8GB

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G Skill Intl F4-4000C15-8GTRS 8GB

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G Skill Intl F5-5600J4040C16G 16GB

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Samsung M378A2G43AB3-CWE 16GB

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Kingston 99U5474-023.A00LF 4GB

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Crucial Technology BL16G30C15U4W.M16FE1 16GB

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NSITEXE Inc Visenta 16GB

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G Skill Intl F4-4000C19-16GTZR 16GB

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Kingston 9905471-001.A01LF 2GB

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Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology CT8G4SFRA266.C4FE 8GB

Crucial Technology CT8G4SFRA266.C4FE 8GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Essencore Limited IM48GU88N26-GIIHA0 8GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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A-DATA Technology AO1P24HC8T1-BSFS 8GB