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Samsung M391B5673EH1-CH9 2GB
Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB
比较
Samsung M391B5673EH1-CH9 2GB vs Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB
总分
Samsung M391B5673EH1-CH9 2GB
总分
Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
31
左右 16% 更低的延时
需要考虑的原因
Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB
报告一个错误
更快的读取速度,GB/s
21.2
12.8
测试中的平均数值
更快的写入速度,GB/s
15.4
9.0
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
31
读取速度,GB/s
12.8
21.2
写入速度,GB/s
9.0
15.4
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2143
3486
Samsung M391B5673EH1-CH9 2GB RAM的比较
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB RAM的比较
Apacer Technology AQD-D4U8GN24-SE 8GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology M471A1K43BB1-CRC 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kingmax Semiconductor GSAH22F-18---------- 16GB
Kingston KHX3200C18D4/8G 8GB
Essencore Limited KD4AGU880-36A180X 16GB
Kingston 9905403-090.A01LF 4GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Kingston ACR512X64D3S13C9G 4GB
Samsung M471A1K43DB1-CTD 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston 99U5702-101.A00G 8GB
Transcend Information TS512MSK64W6H 4GB
G Skill Intl F4-3466C16-4GVK 4GB
Transcend Information JM3200HLE-16G 16GB
Samsung M471A1K43DB1-CWE 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS16G4D30CEST.16FD 16GB
报告一个错误
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Bug description
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