Samsung M391B5673FH0-CH9 2GB vs Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

总分

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

总分

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

差异规格评论

差异

Samsung M391B5673FH0-CH9 2GB

需要考虑的原因
Samsung M391B5673FH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 7% 更低的延时

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

需要考虑的原因
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

报告一个错误

更快的读取速度，GB/s

17.6 13.3

测试中的平均数值
更快的写入速度，GB/s

13.9 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673FH0-CH9 2GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 30
读取速度，GB/s

13.3 17.6
写入速度，GB/s

8.5 13.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2213 3473

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avant Technology J642GU42J5213NF 16GB

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G Skill Intl F4-3000C16-16GSXWB 16GB

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Crucial Technology CT51264BA160B.C16F 4GB

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Crucial Technology CT4G4DFS8213.C8FAD1 4GB

Kingston 99U5315-023.A00LF 512MB

Kingston 99U5315-023.A00LF 512MB

SK Hynix HMA81GU7CJR8N-VK 8GB

SK Hynix HMA81GU7CJR8N-VK 8GB

Samsung M386B4G70DM0-CMA4 32GB

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Samsung M471A1G44AB0-CWE 8GB

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G Skill Intl F5-6400J3239G16G 16GB

Kingston 9965604-027.D00G 8GB

Kingston 9965604-027.D00G 8GB