Samsung M391B5673FH0-CH9 2GB vs Corsair CMK8GX4M2B3000C15 4GB

总分

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

总分

Corsair CMK8GX4M2B3000C15 4GB

Corsair CMK8GX4M2B3000C15 4GB

差异规格评论

差异

Samsung M391B5673FH0-CH9 2GB

需要考虑的原因
Samsung M391B5673FH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 7% 更低的延时

Corsair CMK8GX4M2B3000C15 4GB

需要考虑的原因
Corsair CMK8GX4M2B3000C15 4GB

报告一个错误

更快的读取速度，GB/s

17.6 13.3

测试中的平均数值
更快的写入速度，GB/s

13.7 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673FH0-CH9 2GB

Corsair CMK8GX4M2B3000C15 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 30
读取速度，GB/s

13.3 17.6
写入速度，GB/s

8.5 13.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2213 3077

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD16GX4M2B3000C15 8GB

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G Skill Intl F3-1866C8-8GTX 8GB

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G Skill Intl F4-3200C16-8GSX 8GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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Crucial Technology CT8G4DFRA266.M4FE 8GB

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AMD R5316G1609U2K 8GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Kingston X3XCFP-HYA 8GB

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Kingston 99U5584-017.A00LF 4GB

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Micron Technology 9ASF51272PZ-2G3B1 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

Kingston HP669238-071-HYC 4GB

Kingston HP669238-071-HYC 4GB

SK Hynix HMA81GS6CJRJR-VK 8GB

SK Hynix HMA81GS6CJRJR-VK 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Crucial Technology CT16G4SFD824A.M16FA 16GB

Crucial Technology CT16G4SFD824A.M16FA 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Corsair CM4X16GE2666C16K8 16GB

Corsair CM4X16GE2666C16K8 16GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Kingston 9905625-075.A00G 16GB

Kingston 9905625-075.A00G 16GB