Samsung M391B5673FH0-CH9 2GB vs Crucial Technology BL8G30C15U4R.8FE 8GB

总分

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

总分

Crucial Technology BL8G30C15U4R.8FE 8GB

Crucial Technology BL8G30C15U4R.8FE 8GB

差异规格评论

差异

Samsung M391B5673FH0-CH9 2GB

需要考虑的原因
Samsung M391B5673FH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 32

左右 13% 更低的延时

Crucial Technology BL8G30C15U4R.8FE 8GB

需要考虑的原因
Crucial Technology BL8G30C15U4R.8FE 8GB

报告一个错误

更快的读取速度，GB/s

17.9 13.3

测试中的平均数值
更快的写入速度，GB/s

12.9 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673FH0-CH9 2GB

Crucial Technology BL8G30C15U4R.8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 32
读取速度，GB/s

13.3 17.9
写入速度，GB/s

8.5 12.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2213 3115

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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Corsair CM3X8GA2400C11Y2R 8GB

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Micron Technology 4ATF51264HZ-3G2J1 4GB

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SK Hynix HYMP112U64CP8-S6 1GB

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A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Micron Technology 18ASF1G72PDZ-2G1B1 8GB

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Kingston HP698651-154-MCN 8GB

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SK Hynix HMA81GU7CJR8N-VK 8GB

SK Hynix HMA81GU7CJR8N-VK 8GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Corsair CMT32GX4M2D3600C18 16GB

Corsair CMT32GX4M2D3600C18 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Crucial Technology CT16G4SFD824A.C16FE 16GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Crucial Technology CT32G4DFD832A.C16FE 32GB

Crucial Technology CT32G4DFD832A.C16FE 32GB