RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M391B5673FH0-CH9 2GB
Crucial Technology BLS8G4S240FSD.16FBD2 8GB

Samsung M391B5673FH0-CH9 2GB vs Crucial Technology BLS8G4S240FSD.16FBD2 8GB

总分
star star star star star
Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

总分
star star star star star
Crucial Technology BLS8G4S240FSD.16FBD2 8GB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

差异 规格 评论

差异

Samsung M391B5673FH0-CH9 2GB 需要考虑的原因
Samsung M391B5673FH0-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 31
    左右 10% 更低的延时
Crucial Technology BLS8G4S240FSD.16FBD2 8GB 需要考虑的原因
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.4 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673FH0-CH9 2GB
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 31
  • 读取速度，GB/s
    13.3 left arrow 16.4
  • 写入速度，GB/s
    8.5 left arrow 12.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2213 left arrow 2928

Samsung M391B5673FH0-CH9 2GB RAM的比较

Samsung M391B5673EH1-CH9 2GB
Samsung M378B5673FH0-CH9 2GB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB RAM的比较

Crucial Technology CT16G4DFD8266.M16FJ 16GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Avant Technology J641GU42J7240ND 8GB
Avant Technology J641GU42J7240ND 8GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Kingston 9905701-011.A00G 16GB
Kingston 9905701-011.A00G 16GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Samsung M392A4K40BM0-CRC 32GB
Samsung M392A4K40BM0-CRC 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Essencore Limited KD48GU880-32N220T 8GB
Essencore Limited KD48GU880-32N220T 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Corsair CMW64GX4M4A2666C16 16GB
Corsair CMW64GX4M4A2666C16 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Samsung M386A2G40DB0-CPB 16GB
Samsung M386A2G40DB0-CPB 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Kingston 99U5625-015.A00G 16GB
Kingston 99U5625-015.A00G 16GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905625-096.A00G 16GB
Kingston 9905625-096.A00G 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Kingston 9905630-025.A00G 8GB
Kingston 9905630-025.A00G 8GB
内存RAM