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Samsung M393A1G40DB0-CPB 8GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
比较
Samsung M393A1G40DB0-CPB 8GB vs Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
总分
Samsung M393A1G40DB0-CPB 8GB
总分
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393A1G40DB0-CPB 8GB
报告一个错误
需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
报告一个错误
低于PassMark测试中的延时,ns
23
49
左右 -113% 更低的延时
更快的读取速度,GB/s
17
10.9
测试中的平均数值
更快的写入速度,GB/s
12.9
8.7
测试中的平均数值
规格
完整的技术规格清单
Samsung M393A1G40DB0-CPB 8GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
49
23
读取速度,GB/s
10.9
17.0
写入速度,GB/s
8.7
12.9
内存带宽,mbps
17000
17000
Other
描述
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2427
2938
Samsung M393A1G40DB0-CPB 8GB RAM的比较
Kingston 99U5403-036.A00G 4GB
Kingston 9905403-156.A00LF 2GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB RAM的比较
Patriot Memory (PDP Systems) PSD34G16002 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M4 70T2953EZ3-CE6 1GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3200C16-16GVR 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Corsair CMD32GX4M4C3200C14T 8GB
Kingston KVR800D2N6/2G 2GB
Teikon TMA81GS6AFR8N-UHSC 8GB
Kingston 9905458-017.A01LF 4GB
Corsair CMK8GX4M2A2666C16 4GB
Samsung M471B5273CH0-CH9 4GB
Apacer Technology 78.CAGNK.4040B 8GB
Kingston HP698651-154-MCN 8GB
Micron Technology 16ATF2G64AZ-2G6H1 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Crucial Technology BL16G32C16U4W.16FE 16GB
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Samsung M471B1G73QH0-YK0 8GB
OCMEMORY OCM3200CL16D-16GBN 8GB
Kingston 9905403-447.A00LF 4GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology BLS8G4D32AESEK.M8FE 8GB
报告一个错误
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Bug description
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