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Samsung M393B1G70BH0-CK0 8GB
Corsair CMD16GX4M2A2400C14 8GB

Samsung M393B1G70BH0-CK0 8GB vs Corsair CMD16GX4M2A2400C14 8GB

总分
star star star star star
Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分
star star star star star
Corsair CMD16GX4M2A2400C14 8GB

Corsair CMD16GX4M2A2400C14 8GB

差异 规格 评论

差异

Samsung M393B1G70BH0-CK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
Corsair CMD16GX4M2A2400C14 8GB 需要考虑的原因
Corsair CMD16GX4M2A2400C14 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 51
    左右 -132% 更低的延时
  • 更快的读取速度，GB/s
    18.6 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
Corsair CMD16GX4M2A2400C14 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 22
  • 读取速度，GB/s
    9.8 left arrow 18.6
  • 写入速度，GB/s
    8.1 left arrow 13.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 3220

Samsung M393B1G70BH0-CK0 8GB RAM的比较

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

Corsair CMD16GX4M2A2400C14 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Apacer Technology 78.CAGRN.40C0B 8GB
Apacer Technology 78.CAGRN.40C0B 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3600C16-32GVK 32GB
G Skill Intl F4-3600C16-32GVK 32GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Corsair CMK32GX4M4B3200C14 8GB
Corsair CMK32GX4M4B3200C14 8GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Essencore Limited KD4AGS88C-32N220D 16GB
Essencore Limited KD4AGS88C-32N220D 16GB
内存RAM
Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
Corsair CMU32GX4M4C3000C16 8GB
Corsair CMU32GX4M4C3000C16 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Kingston 9905701-010.A00G 16GB
Kingston 9905701-010.A00G 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB
Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Team Group Inc. Team-Elite-2133 4GB
Team Group Inc. Team-Elite-2133 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
SK Hynix HMA41GR7AFR8N-TF 8GB
SK Hynix HMA41GR7AFR8N-TF 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston KHX3200C20S4/32GX 32GB
Kingston KHX3200C20S4/32GX 32GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
内存RAM