Samsung M393B1G70BH0-CK0 8GB vs Corsair CMD16GX4M2K4133C19 8GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

Corsair CMD16GX4M2K4133C19 8GB

Corsair CMD16GX4M2K4133C19 8GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

Corsair CMD16GX4M2K4133C19 8GB

需要考虑的原因
Corsair CMD16GX4M2K4133C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 51

左右 -168% 更低的延时
更快的读取速度，GB/s

19.9 9.8

测试中的平均数值
更快的写入速度，GB/s

18.0 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

Corsair CMD16GX4M2K4133C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 19
读取速度，GB/s

9.8 19.9
写入速度，GB/s

8.1 18.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2208 3691

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 16ATF2G64AZ-2G1B1 8GB

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Kingston KHX2133C11S3L/4G 4GB

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Kingston 99U5474-038.A00LF 4GB

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Apacer Technology 78.CAGR4.DFC0B 8GB

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Corsair CMH16GX4M2Z3200C16 8GB

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A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

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SK Hynix HYMP512U64CP8-Y5 1GB

Kingston 9905663-016.A00G 16GB

Kingston 9905663-016.A00G 16GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Team Group Inc. TEAMGROUP-UD4-3733 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

G Skill Intl F4-3200C16-16GTZSW 16GB

G Skill Intl F4-3200C16-16GTZSW 16GB