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Samsung M393B1G70BH0-CK0 8GB
Corsair CMK16GX4M4B3733C17 4GB

Samsung M393B1G70BH0-CK0 8GB vs Corsair CMK16GX4M4B3733C17 4GB

总分
star star star star star
Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分
star star star star star
Corsair CMK16GX4M4B3733C17 4GB

Corsair CMK16GX4M4B3733C17 4GB

差异 规格 评论

差异

Samsung M393B1G70BH0-CK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
Corsair CMK16GX4M4B3733C17 4GB 需要考虑的原因
Corsair CMK16GX4M4B3733C17 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 51
    左右 -168% 更低的延时
  • 更快的读取速度，GB/s
    20.3 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.7 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
Corsair CMK16GX4M4B3733C17 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 19
  • 读取速度，GB/s
    9.8 left arrow 20.3
  • 写入速度，GB/s
    8.1 left arrow 16.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 3485

Samsung M393B1G70BH0-CK0 8GB RAM的比较

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

Corsair CMK16GX4M4B3733C17 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BL16G32C16U4R.M16FE 16GB
Crucial Technology BL16G32C16U4R.M16FE 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMK16GX4M4B3733C17 4GB
Corsair CMK16GX4M4B3733C17 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Kingston 9905712-016.A00G 16GB
Kingston 9905712-016.A00G 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Kingston MSI21D4S15HAG/8G 8GB
Kingston MSI21D4S15HAG/8G 8GB
内存RAM
SK Hynix HMT31GR7BFR4C-H9 8GB
SK Hynix HMT31GR7BFR4C-H9 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Golden Empire CL14-16-16 D4-3000 4GB
Golden Empire CL14-16-16 D4-3000 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HMA851U6CJR6N-VK 4GB
SK Hynix HMA851U6CJR6N-VK 4GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
AMD R748G2400U2S 8GB
AMD R748G2400U2S 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Ramaxel Technology RMUA5200ME78HAF-3200 8GB
Ramaxel Technology RMUA5200ME78HAF-3200 8GB
内存RAM