Samsung M393B1G70BH0-CK0 8GB vs Crucial Technology BLM16G44C19U4B.M8FB1 16GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

Crucial Technology BLM16G44C19U4B.M8FB1 16GB

Crucial Technology BLM16G44C19U4B.M8FB1 16GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

Crucial Technology BLM16G44C19U4B.M8FB1 16GB

需要考虑的原因
Crucial Technology BLM16G44C19U4B.M8FB1 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 51

左右 -76% 更低的延时
更快的读取速度，GB/s

20.3 9.8

测试中的平均数值
更快的写入速度，GB/s

17.9 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

Crucial Technology BLM16G44C19U4B.M8FB1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 29
读取速度，GB/s

9.8 20.3
写入速度，GB/s

8.1 17.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2208 3983

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BA1339.D16F 4GB

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Corsair CMK64GX4M8A2133C13 8GB

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Micron Technology 16ATF2G64AZ-2G6E1 16GB

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Kingston KHX1866C10D3/8GX 8GB

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Maxsun MSD48G30M3 8GB

Maxsun MSD48G30M3 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Gloway International (HK) STK2400C15-16GB 16GB

Gloway International (HK) STK2400C15-16GB 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Corsair CMK32GX4M2F4000C19 16GB

Corsair CMK32GX4M2F4000C19 16GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB