Samsung M393B1G70BH0-CK0 8GB vs Crucial Technology BLS16G4S26BFSD.16FD 16GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

Crucial Technology BLS16G4S26BFSD.16FD 16GB

Crucial Technology BLS16G4S26BFSD.16FD 16GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

Crucial Technology BLS16G4S26BFSD.16FD 16GB

需要考虑的原因
Crucial Technology BLS16G4S26BFSD.16FD 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 51

左右 -46% 更低的延时
更快的读取速度，GB/s

15.6 9.8

测试中的平均数值
更快的写入速度，GB/s

12.7 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

Crucial Technology BLS16G4S26BFSD.16FD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 35
读取速度，GB/s

9.8 15.6
写入速度，GB/s

8.1 12.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2208 2969

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AO1P24HC8T1-BSFS 8GB

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Samsung M378B5273EB0-CK0 4GB

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Samsung M379B5273DH0-YK0 4GB

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Kingston 9905403-090.A01LF 4GB

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Micron Technology 18ASF1G72PDZ-2G6E1 8GB

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A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F4-3200C16-4GRB 4GB