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Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT8G4DFD8213.16FA11 8GB

Samsung M393B1G70BH0-CK0 8GB vs Crucial Technology CT8G4DFD8213.16FA11 8GB

总分
star star star star star
Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分
star star star star star
Crucial Technology CT8G4DFD8213.16FA11 8GB

Crucial Technology CT8G4DFD8213.16FA11 8GB

差异 规格 评论

差异

Samsung M393B1G70BH0-CK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
Crucial Technology CT8G4DFD8213.16FA11 8GB 需要考虑的原因
Crucial Technology CT8G4DFD8213.16FA11 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 51
    左右 -96% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.3 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 26
  • 读取速度，GB/s
    9.8 left arrow 15.5
  • 写入速度，GB/s
    8.1 left arrow 11.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 2780

Samsung M393B1G70BH0-CK0 8GB RAM的比较

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

Crucial Technology CT8G4DFD8213.16FA11 8GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
内存RAM
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Micron Technology 16KTF1G64HZ-1G9E2 8GB
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Crucial Technology CT4G4DFS8266.M8FF 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C
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G Skill Intl F4-3200C14-8GTZSK 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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内存RAM
AMD R538G1601U2S-UO 8GB
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内存RAM
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TwinMOS 8DPT5MK8-TATP 2GB
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Patriot Memory (PDP Systems) PSD432G32002S 32GB
内存RAM
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内存RAM
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SK Hynix HYMP125U64CP8-S6 2GB
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Crucial Technology CT4G4DFS8213.M8FB 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
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Crucial Technology CT16G4DFD824A.C16FDR 16GB
内存RAM
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G Skill Intl F3-14900CL8-4GBXM 4GB
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内存RAM
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Kingston KHX1866C10D3/8GX 8GB
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SK Hynix HMA851S6CJR6N-XN 4GB
内存RAM
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G Skill Intl F2-8500CL5-2GBPI 2GB
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内存RAM