Samsung M393B1G70BH0-CK0 8GB vs G Skill Intl F4-4266C19-4GTZ 4GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

G Skill Intl F4-4266C19-4GTZ 4GB

G Skill Intl F4-4266C19-4GTZ 4GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

G Skill Intl F4-4266C19-4GTZ 4GB

需要考虑的原因
G Skill Intl F4-4266C19-4GTZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

18 51

左右 -183% 更低的延时
更快的读取速度，GB/s

20.3 9.8

测试中的平均数值
更快的写入速度，GB/s

17.8 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-4266C19-4GTZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 18
读取速度，GB/s

9.8 20.3
写入速度，GB/s

8.1 17.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2208 3507

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

G Skill Intl F4-2133C15-8GRK 8GB

G Skill Intl F4-2133C15-8GRK 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Crucial Technology CT8G4DFD8213.C16FDR2 8GB

Crucial Technology CT8G4DFD8213.C16FDR2 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-4266C19-4GTZ 4GB

G Skill Intl F4-4266C19-4GTZ 4GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMA42GR7AFR4N-UH 16GB

SK Hynix HMA42GR7AFR4N-UH 16GB

SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

Chun Well Technology Holding Limited D4U0832161B 8GB

Chun Well Technology Holding Limited D4U0832161B 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Kingston KF2666C13D4/8GX 8GB

Kingston KF2666C13D4/8GX 8GB

SK Hynix HMA81GU6DJR8N-XN 8GB

SK Hynix HMA81GU6DJR8N-XN 8GB

Samsung M471A2K43BB1-CPB 16GB

Samsung M471A2K43BB1-CPB 16GB

Crucial Technology CT16G4SFRA266.M16FRS 16GB

Crucial Technology CT16G4SFRA266.M16FRS 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-2133C15-8GSQ 8GB

G Skill Intl F4-2133C15-8GSQ 8GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

Kingston 9905701-029.A00G 16GB

Kingston 9905701-029.A00G 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT16G4SFD824A.M16FJ 16GB

Crucial Technology CT16G4SFD824A.M16FJ 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Apacer Technology 78.CAGPP.ARC0B 8GB

Apacer Technology 78.CAGPP.ARC0B 8GB