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Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

Samsung M393B1G70BH0-CK0 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

总分
star star star star star
Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

差异 规格 评论

差异

Samsung M393B1G70BH0-CK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 51
    左右 -89% 更低的延时
  • 更快的读取速度，GB/s
    14.6 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.5 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 27
  • 读取速度，GB/s
    9.8 left arrow 14.6
  • 写入速度，GB/s
    8.1 left arrow 10.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 2409

Samsung M393B1G70BH0-CK0 8GB RAM的比较

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB RAM的比较

SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMD64GX4M8X3800C19 8GB
Corsair CMD64GX4M8X3800C19 8GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
UMAX Technology 16GB
UMAX Technology 16GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Corsair CMWB8G1L3200K16W4 8GB
Corsair CMWB8G1L3200K16W4 8GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Kingston XRGM6C-MIB 16GB
Kingston XRGM6C-MIB 16GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Corsair CMU32GX4M4C3200C16 8GB
Corsair CMU32GX4M4C3200C16 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston XRGM6C-MIB 16GB
Kingston XRGM6C-MIB 16GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Chun Well Technology Holding Limited D4U0836144B 8GB
Chun Well Technology Holding Limited D4U0836144B 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
SK Hynix HMT41GS6MFR8C-PB 8GB
SK Hynix HMT41GS6MFR8C-PB 8GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Avant Technology J641GU42J7240N3 8GB
Avant Technology J641GU42J7240N3 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMH32GX4M2D3600C18 16GB
Corsair CMH32GX4M2D3600C18 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMSX16GX4M2A2400C16 8GB
Corsair CMSX16GX4M2A2400C16 8GB
内存RAM