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Samsung M393B1G70BH0-CK0 8GB
Kingston HP32D4U8S8HD-8X 8GB

Samsung M393B1G70BH0-CK0 8GB vs Kingston HP32D4U8S8HD-8X 8GB

总分
star star star star star
Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分
star star star star star
Kingston HP32D4U8S8HD-8X 8GB

Kingston HP32D4U8S8HD-8X 8GB

差异 规格 评论

差异

Samsung M393B1G70BH0-CK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
Kingston HP32D4U8S8HD-8X 8GB 需要考虑的原因
Kingston HP32D4U8S8HD-8X 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 51
    左右 -82% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.5 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
Kingston HP32D4U8S8HD-8X 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 28
  • 读取速度，GB/s
    9.8 left arrow 17.8
  • 写入速度，GB/s
    8.1 left arrow 16.5
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 3683

Samsung M393B1G70BH0-CK0 8GB RAM的比较

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

Kingston HP32D4U8S8HD-8X 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905622-051.A00G 8GB
Kingston 9905622-051.A00G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C18-32GVK 32GB
G Skill Intl F4-3600C18-32GVK 32GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston HP32D4U8S8HD-8X 8GB
Kingston HP32D4U8S8HD-8X 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-2666C19-8GIS 8GB
G Skill Intl F4-2666C19-8GIS 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Transcend Information JM3200HLE-16G 16GB
Transcend Information JM3200HLE-16G 16GB
内存RAM
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
Kingston HX426C16FB2/8-SP 8GB
Kingston HX426C16FB2/8-SP 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
内存RAM
Kingston 99U5315-023.A00LF 512MB
Kingston 99U5315-023.A00LF 512MB
Kingston 99U5316-028.A00LF 1GB
Kingston 99U5316-028.A00LF 1GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Smart Modular SF464128CKHI6DFSEG 4GB
Smart Modular SF464128CKHI6DFSEG 4GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3466C16-4GTZ 4GB
G Skill Intl F4-3466C16-4GTZ 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMW16GX4M2E3200C16 8GB
Corsair CMW16GX4M2E3200C16 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Mushkin 99[2/7/4]200[F/T] 8GB
Mushkin 99[2/7/4]200[F/T] 8GB
内存RAM