Samsung M393B1G70BH0-CK0 8GB vs Micron Technology 18ASF1G72PDZ-2G3A2 8GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G3A2 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 51

左右 -55% 更低的延时
更快的读取速度，GB/s

10.3 9.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 33
读取速度，GB/s

9.8 10.3
写入速度，GB/s

8.1 8.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2208 2235

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G32C16U4WL.M8FE1 8GB

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G Skill Intl F4-3600C18-32GTZN 32GB

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Micron Technology 18ASF1G72PDZ-2G3A2 8GB

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G Skill Intl F4-4800C20-16GTZR 16GB

SK Hynix HMT351U6CFR8C-H9 4GB

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G Skill Intl F4-3200C16-8GTRS 8GB

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