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Samsung M393B1G70BH0-CK0 8GB
Micron Technology 9ASF51272PZ-2G1AX 4GB

Samsung M393B1G70BH0-CK0 8GB vs Micron Technology 9ASF51272PZ-2G1AX 4GB

总分
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Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分
star star star star star
Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

差异 规格 评论

差异

Samsung M393B1G70BH0-CK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
  • 更快的读取速度，GB/s
    9.8 left arrow 7.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.1 left arrow 6.8
    测试中的平均数值
Micron Technology 9ASF51272PZ-2G1AX 4GB 需要考虑的原因
Micron Technology 9ASF51272PZ-2G1AX 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 51
    左右 -31% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 39
  • 读取速度，GB/s
    9.8 left arrow 7.7
  • 写入速度，GB/s
    8.1 left arrow 6.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 1768

Samsung M393B1G70BH0-CK0 8GB RAM的比较

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

Micron Technology 9ASF51272PZ-2G1AX 4GB RAM的比较

Crucial Technology CT2K102464BD160B 8GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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