Samsung M393B1G70BH0-CK0 8GB vs Patriot Memory (PDP Systems) 2666 C15 Series 4GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 2666 C15 Series 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 51

左右 -65% 更低的延时
更快的读取速度，GB/s

16.3 9.8

测试中的平均数值
更快的写入速度，GB/s

12.8 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 31
读取速度，GB/s

9.8 16.3
写入速度，GB/s

8.1 12.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2208 3084

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Essencore Limited KD4AGU880-36A180X 16GB

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Kingston 99U5474-010.A00LF 2GB

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Team Group Inc. TEAMGROUP-UD4-4500 8GB

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Ramaxel Technology RMUA5090KB78HAF2133 8GB

Ramaxel Technology RMUA5090KB78HAF2133 8GB

Crucial Technology CT51264AC800.C16FC 4GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

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SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB