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Samsung M393B1G70BH0-YK0 8GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Samsung M393B1G70BH0-YK0 8GB vs Gloway International Co. Ltd. TYA4U2666D19161C 16GB

总分
star star star star star
Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分
star star star star star
Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

差异 规格 评论

差异

Samsung M393B1G70BH0-YK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    49 left arrow 50
    左右 2% 更低的延时
  • 更快的写入速度，GB/s
    8.1 left arrow 7.3
    测试中的平均数值
Gloway International Co. Ltd. TYA4U2666D19161C 16GB 需要考虑的原因
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
报告一个错误
  • 更快的读取速度，GB/s
    12.5 left arrow 10.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-YK0 8GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 50
  • 读取速度，GB/s
    10.2 left arrow 12.5
  • 写入速度，GB/s
    8.1 left arrow 7.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2465 left arrow 2326

Samsung M393B1G70BH0-YK0 8GB RAM的比较

Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
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Crucial Technology CT16G4SFD824A.C16FHD 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
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Kingston 9905584-016.A00LF 4GB
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SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
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Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
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Crucial Technology BLS8G4D26BFSC.16FD2 8GB
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Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
Ramaxel Technology RMSA3340MB88HBF-3200 16GB
Ramaxel Technology RMSA3340MB88HBF-3200 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
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Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
内存RAM
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Nanya Technology NT4GC72B4NA1NL-CG 4GB
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Apacer Technology 78.CAGPN.AZ50C 8GB
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Kingston 99P5471-002.AOOLF 4GB
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内存RAM
Samsung M393B2G70AH0-YH9 16GB
Samsung M393B2G70AH0-YH9 16GB
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内存RAM
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Samsung M471B5673FH0-CF8 2GB
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G Skill Intl F4-3200C16-32GTRG 32GB
内存RAM
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Kingston 9905316-106.A02LF 1GB
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A-DATA Technology AO1P26KCST2-BZISHC 16GB
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Elpida EBJ41UF8BDU5-GN-F 4GB
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G Skill Intl F4-3600C17-4GTZ 4GB
内存RAM
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Kingston 99U5471-052.A00LF 8GB
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Kingston 9965596-029.B00G 4GB
内存RAM