Samsung M393B1G70BH0-YK0 8GB vs Micron Technology 4ATF51264AZ-2G3B1 4GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

Micron Technology 4ATF51264AZ-2G3B1 4GB

需要考虑的原因
Micron Technology 4ATF51264AZ-2G3B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 49

左右 -44% 更低的延时
更快的读取速度，GB/s

15.6 10.2

测试中的平均数值
更快的写入速度，GB/s

11.2 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 34
读取速度，GB/s

10.2 15.6
写入速度，GB/s

8.1 11.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2465 2468

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology BLS8G4D26BFSE.16FD2 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Kingston HP32D4U2S1ME-8 8GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

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G Skill Intl F4-2400C15-16GTZRX 16GB

G Skill Intl F4-2400C15-16GTZRX 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

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SK Hynix HMA81GS6CJR8N-XN 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Golden Empire CL15-15-15 D4-2666 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Ramaxel Technology RMSA3300ME78HBF-2666 16GB

Ramaxel Technology RMSA3300ME78HBF-2666 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology CT8G4SFS832A.C8FP 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 8ATF1G64HZ-2G6J1 8GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Avant Technology J642GU42J9266N2 16GB

Avant Technology J642GU42J9266N2 16GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Corsair CMW128GX4M8C3200C16 16GB

Corsair CMW128GX4M8C3200C16 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F4-2666C18-4GRS 4GB

G Skill Intl F4-2666C18-4GRS 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-4000C19-16GTZSW 16GB

G Skill Intl F4-4000C19-16GTZSW 16GB