Samsung M393B1G70BH0-YK0 8GB vs Patriot Memory (PDP Systems) 4400 C18 Series 8GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 4400 C18 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 49

左右 -81% 更低的延时
更快的读取速度，GB/s

19.9 10.2

测试中的平均数值
更快的写入速度，GB/s

17.1 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 27
读取速度，GB/s

10.2 19.9
写入速度，GB/s

8.1 17.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2465 3829

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4X16GE2400Z16K4 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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G Skill Intl F4-2133C15-8GRR2 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMU16GX4M2D3200C16 8GB

Corsair CMU16GX4M2D3200C16 8GB

Kingston 99U5471-052.A00LF 8GB

Kingston 99U5471-052.A00LF 8GB

Mushkin MR[ABC]4U360JNNM8G 8GB

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Corsair CMD16GX4M4B3200C15 4GB

Corsair CMD16GX4M4B3200C15 4GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB