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Samsung M393B1G70QH0-YK0 8GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Samsung M393B1G70QH0-YK0 8GB vs Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

总分
star star star star star
Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分
star star star star star
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

差异 规格 评论

差异

Samsung M393B1G70QH0-YK0 8GB 需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB
报告一个错误
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB 需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 52
    左右 -148% 更低的延时
  • 更快的读取速度，GB/s
    18.5 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.0 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70QH0-YK0 8GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 21
  • 读取速度，GB/s
    9.8 left arrow 18.5
  • 写入速度，GB/s
    8.0 left arrow 14.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2179 left arrow 3263

Samsung M393B1G70QH0-YK0 8GB RAM的比较

Kingston 9965433-406.A00LF 8GB
Samsung M393B1G70BH0-YK0 8GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB RAM的比较

Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905403-061.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Lexar Co Limited LD4AU016G-H2666G 16GB
Lexar Co Limited LD4AU016G-H2666G 16GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Kingston ACR26D4S9S8MH-8 8GB
Kingston ACR26D4S9S8MH-8 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
AMD R744G2606U1S 4GB
AMD R744G2606U1S 4GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
A-DATA Technology AM1P24HC8T1-BBJS 8GB
A-DATA Technology AM1P24HC8T1-BBJS 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Kingston MSI24D4S7S7MH-16 16GB
Kingston MSI24D4S7S7MH-16 16GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston 9905712-008.A00G 16GB
Kingston 9905712-008.A00G 16GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
G Skill Intl F4-3600C16-8GTZRC 8GB
G Skill Intl F4-3600C16-8GTZRC 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-2133C15-16GVR 16GB
G Skill Intl F4-2133C15-16GVR 16GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-3200C15-16GTZSW 16GB
G Skill Intl F4-3200C15-16GTZSW 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
内存RAM