Samsung M393B1G70QH0-YK0 8GB vs Micron Technology 4ATF51264HZ-2G3E1 4GB

总分

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分

Micron Technology 4ATF51264HZ-2G3E1 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

差异规格评论

差异

Samsung M393B1G70QH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB

报告一个错误

Micron Technology 4ATF51264HZ-2G3E1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G3E1 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 52

左右 -93% 更低的延时
更快的读取速度，GB/s

14.8 9.8

测试中的平均数值
更快的写入速度，GB/s

10.2 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70QH0-YK0 8GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 27
读取速度，GB/s

9.8 14.8
写入速度，GB/s

8.0 10.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2179 2173

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMG32GX4M2E3200C16 16GB

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Samsung M393B1K70CH0-CH9 8GB

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Micron Technology 8ATF1G64HZ-2G1A1 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N

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AMD R538G1601U2S-UO 8GB

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Smart Modular SF4641G8CKHIWDFSEG 8GB

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Kingston 99U5595-005.A00LF 2GB

G Skill Intl F4-2800C15-16GRKD 16GB

G Skill Intl F4-2800C15-16GRKD 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

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Crucial Technology BL16G32C16U4R.M16FE1 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Kingston KHX2933C17D4/8G 8GB

Kingston KHX2933C17D4/8G 8GB